Memory power reduction
* Memory retention voltage depends on PVT * Leakage during memory state retention ( Data retention during standby) * As retention time increases more errors Solutions: 1. Voltage scaling ( as VDD reduces number of errors increases , Leakage current ) 2. Error correction codes Effect of ECC: 1. max 1 error per line can be corrected, 2 errors can be detected 2. Area: Memory size increase by (n-k)/n small additional area for encoder and decoder units ( Fully combinational blocks) 3. Latency : Encoding latency added to write access Decoding latency added to read access For SEC/SED Number of data bits No of check bits 8-11 5 12-26 ...